钽酸锂(LT)

Fe doped LT Wafers

Parameter

Specification

Material

LiTaO3 wafers(White or Black &Fe doped)

Diameter

3inch/4inch/6inch

Diameter Tolerance

±0.03mm

Curie Temp

603±2℃

Cutting Angle

X/Y/Z/X112Y/Y36/Y42/Y48/etc

Tol(±)

<0.20 mm

Thickness

0.18 ~ 0.5mm or more

Primary Flat

22mm /32mm /42.5mm /57.5mm

LTV (5mmx5mm)

<1µm

TTV

<3µm

BOW

-30

WARP

<40µm

PLTV(<0.5um)

≥95%(5mm*5mm)

Orientation Flat

All available

Surface Type

Single Side Polished(SSP) /Double Sides Polished(DSP)

Polished side Ra

<0.5nm

Back Side Criteria

General is 0.2-0.5µm or as customized

Edge Criteria

R=0.2mm or Bullnose

Fe doped

Fe doped for saw grade LN< wafers

Wafer Surface Criteria

Transmissivity general:5.9x10-11-10 at 25℃

Contamination None

Particles @>0.3 µm ≤30

Scratch , Chipping None

Defect No edge cracks, scratches, saw marks, stains

Packing

25pcs per box

Optical Grade Lithium Tantalate Wafers

Parameter

Specification

Material

LiTaO3 wafers(White or Black)

Diameter

2inch/3inch/4inch

Diameter Tolerance

±0.03mm

Curie Temp

603±2℃

Cutting Angle

X/Y/Z etc.

Tol(±)

<0.20 mm

Thickness

0.18 ~ 0.5mm or more

Primary Flat

16mm/22mm /32mm

TTV

<3µm

BOW

-30

WARP

<40µm

Surface Type

Single Side Polished(SSP) /Double Sides Polished(DSP)

Polished side Ra

<0.5nm

Back Side Criteria

General is 0.2-0.5µm or as customized

Edge Criteria

R=0.2mm or Bullnose

Optical doped

Zn/MgO etc.

Wafer Surface Criteria

Contamination None

Particles @>0.3 µm ≤30

Scratch , Chipping None

Defect No edge cracks, scratches, saw marks, stains

Packing

25pcs per box

SAW Grade Lithium Tantalate Wafers

Parameter

Specification

Material

LiTaO3 wafers

Diameter

3inch/4inch/6inch

Diameter Tolerance

±0.03mm

Curie Temp

603±2℃

Cutting Angle

X/Y/Z/X112Y/Y36/Y42/Y48/etc.

Tol(±)

<0.20 mm

Thickness

0.18 ~ 0.5mm or more

Primary Flat

22mm /32mm /42.5mm /57.5mm

LTV (5mmx5mm)

<1µm

TTV

<3µm

BOW

-30

WARP

<40µm

PLTV(<0.5um)

≥95%(5mm*5mm)

Orientation Flat

All available

Surface Type

Single Side Polished(SSP) /Double Sides Polished(DSP)

Polished side Ra

<0.5nm

Back Side Criteria

General is 0.2-0.5µm or as customized

Edge Criteria

R=0.2mm or Bullnose

Wafer Surface Criteria

Transmissivity general:5.9x10-11-10 at 25℃

Contamination None

Particles @>0.3 µm ≤30

Scratch , Chipping None

Defect No edge cracks, scratches, saw marks, stains

Packing

25pcs per box